Relais-Typ: Halbleiter. Gehäuse: DIP4. Relaisausführung: 1-phasen. Betriebsstrom max.: 550mA. Widerst im Leitungszust: 0.85Ω. Schaltspannung: max.
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AQY212EHA - MOSFET Relais. Leistungsstarkes SMD-MOSFET-Relais mit hoher Empfindlichkeit und niedrigem Durchgangswiderstand. Neue und unbenutzte Originalware aus Überbeständen industrieller Fertigung.
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All of our products are securedin Japan to protect your applications from counterfeit or poor quality products.
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Engineering Series No G3VM. Type PhotoMOS relay. It is designed for high-speed switching applications with reduced electrical noise and minimal power consumption. During that process you will be issued with an RMA number.
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